BIT LINE SENSE AMPLIFIER CIRCUIT SHARED BY FIRST MEMORY BLOCK AND SECOND MEMORY BLOCK IN SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A bit line sense amplifier circuit shared by the first memory block and the second memory block in a semiconductor memory device is provided to perform a wafer burn-in mode. CONSTITUTION: According to the sense amplifier circuit shared by the first memory block and the second memory block in a semiconductor memory device, an amplification part(502) senses a voltage difference between the first node and the second node and then amplifies it. The first connection part(504) connects a bit line and a corresponding bit bar line of the first memory block to the first node and the second node selectively. The second connection part(506) connects a bit line and a corresponding bit bar line of the second memory block to the first node and the second node selectively. And a bit line precharge part(508) applies the first bit line precharge voltage to the first node and the second bit line precharge voltage to the second node, in a wafer burn-in mode.