发明名称 |
Film forming method and film forming apparatus |
摘要 |
After coating a resist for silylation on the semi-conductor substrate, the resist is exposed with a pattern. Then the silylation process is performed to form a silylated layer and the silylated layer is hardened with performing an electron beam processing or a ultra-violet ray processing. After that, an etching is performed with using the hardened silylated layer as a mask and the wiring step is taken without removing the hardened silylated layer as a stopper for chemical mechanical polishing. With this embodiment, the patterning steps of an insulation film can be simplified.
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申请公布号 |
US6683006(B2) |
申请公布日期 |
2004.01.27 |
申请号 |
US20020176051 |
申请日期 |
2002.06.21 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KONISHI NOBUO;IWASHITA MITSUAKI |
分类号 |
C23C16/00;C23F1/00;G03F7/26;H01L21/00;H01L21/302;H01L21/31;H01L21/311;H01L21/461;H01L21/469;H01L21/4763;H01L21/768;(IPC1-7):H01L21/302 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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