发明名称 |
Chemical vapor deposition systems including metal complexes with chelating O- and/or N-donor ligands |
摘要 |
A method of forming a film on a substrate using one or more complexes containing one or more chelating O- and/or N-donor ligands. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
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申请公布号 |
US6682602(B2) |
申请公布日期 |
2004.01.27 |
申请号 |
US20020223425 |
申请日期 |
2002.08.19 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
VAARTSTRA BRIAN A. |
分类号 |
C23C16/40;H01L21/285;H01L21/768;H01L21/8242;H01L21/8246;H01L27/108;(IPC1-7):C23C16/00;B01J7/00;H01L21/44;C07F1/00 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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