发明名称 Chemical vapor deposition systems including metal complexes with chelating O- and/or N-donor ligands
摘要 A method of forming a film on a substrate using one or more complexes containing one or more chelating O- and/or N-donor ligands. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
申请公布号 US6682602(B2) 申请公布日期 2004.01.27
申请号 US20020223425 申请日期 2002.08.19
申请人 MICRON TECHNOLOGY, INC. 发明人 VAARTSTRA BRIAN A.
分类号 C23C16/40;H01L21/285;H01L21/768;H01L21/8242;H01L21/8246;H01L27/108;(IPC1-7):C23C16/00;B01J7/00;H01L21/44;C07F1/00 主分类号 C23C16/40
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