发明名称 |
Hall effect device with multiple layers |
摘要 |
A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface: and (b) a ferromagnetic multilayer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can be a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.
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申请公布号 |
US6683359(B2) |
申请公布日期 |
2004.01.27 |
申请号 |
US20020176002 |
申请日期 |
2002.06.21 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
JOHNSON MARK B.;PRINZ GARY A. |
分类号 |
H01L29/82;H01L43/06;(IPC1-7):H01L29/82 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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