发明名称 |
Method for forming minimally spaced MRAM structures |
摘要 |
A method of forming minimally spaced MRAM structures is disclosed. A photolithography technique is employed to define masking patterns, on the sidewalls of which spacers are subsequently formed to reduce the distance between any of the two adjacent masking patterns. A filler material is next used to fill in the space around the masking patterns and to form filler plugs. The masking patterns and the spacers are removed using the filler plugs as a hard mask. Digit and word lines of MRAM structures are subsequently formed.
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申请公布号 |
US6682943(B2) |
申请公布日期 |
2004.01.27 |
申请号 |
US20010842783 |
申请日期 |
2001.04.27 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DURCAN D. MARK;SANDHU GURTEJ;DOAN TRUNG T.;LEE ROGER;KELLER DENNIS;EARL REN |
分类号 |
H01L27/105;H01B13/00;H01G7/06;H01L21/00;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):H01G7/06 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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