发明名称 |
Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride |
摘要 |
Metal which forms a crystalline insulation layer is sputtered at a target and deposited as a film on a silicon substrate, the metal is chemically combined with reactive gas around the silicon substrate to thereby grow a crystal layer of a crystalline insulation substance, and a voltage is applied to the substrate so that ions of the reactive gas around the substrate are attracted to a surface of the silicon substrate and chemically combined with silicon, whereby an insulation silicon compound layer is formed. As a result, a structure is obtained in which a crystalline insulation layer is formed on a crystalline silicon layer through an amorphous insulation film which is formed by a silicon compound which has an excellent insulation characteristic.
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申请公布号 |
US6683012(B2) |
申请公布日期 |
2004.01.27 |
申请号 |
US20020190520 |
申请日期 |
2002.07.09 |
申请人 |
ROHM CO., LTD. |
发明人 |
HATA TOMONOBU;SASAKI KIMIHIRO;KAMISAWA AKIRA |
分类号 |
C23C14/08;C23C14/34;C30B23/02;H01L21/316;(IPC1-7):H01L21/31;H01L21/469;C23C14/14;C23C14/16;C23C14/06 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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