发明名称 |
Read/write memory arrays and methods with predetermined and retrievable latent-state patterns |
摘要 |
Static read/write memory structures are provided that include predetermined latent-state patterns which can be retrieved with a latent-state retrieve process that differs somewhat from a conventional write process. The patterns are realized with threshold-voltage differences and they significantly enhance flexibility of memory allocation without increasing memory area nor significantly altering conventional read/write processes.
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申请公布号 |
US6683804(B1) |
申请公布日期 |
2004.01.27 |
申请号 |
US20020198263 |
申请日期 |
2002.07.16 |
申请人 |
ANALOG DEVICES, INC. |
发明人 |
EBY MICHAEL D.;ZEMLOK KENNETH CARL;DUGGAN COLIN DAVID |
分类号 |
G11C7/20;G11C11/412;G11C11/419;(IPC1-7):G11C11/03 |
主分类号 |
G11C7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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