发明名称 Method of manufacturing a semiconductor
摘要 A semiconductor manufacturing method and a semiconductor manufacturing apparatus capable of manufacturing semiconductor devices without the need of specifically determining an optimal configuration of a gas mixing chamber (6) with care or elaboration. A ruthenium raw gas feed pipe (4) and an oxygen-containing gas feed pipe (5) are merged with each other at a location upstream of a gas mixing chamber (6), so that the ruthenium raw gas and the gas containing oxygen atoms (e.g., oxygen (O2), ozone (O3), etc.) are mixed with each other prior to entering the gas mixing chamber (6).
申请公布号 US6682971(B2) 申请公布日期 2004.01.27
申请号 US20010820194 申请日期 2001.03.29
申请人 HITACHI KOKUSAI ELECTRIC INC.;HITACHI, LTD. 发明人 TSUNEDA MASAYUKI;ITATANI HIDEHARU
分类号 C23C16/455;C23C16/18;C23C16/40;C23C16/44;H01L21/205;H01L21/28;H01L21/285;H01L21/31;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 主分类号 C23C16/455
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