发明名称 Semiconductor device and manufacturing method thereof
摘要 A method of realizing an active matrix display device having flexibility is provided. Further, a method for reducing parasitic capacitance between wirings formed on different layers is provided. After fixing a second substrate to a thin film device formed on a first substrate by bonding, the first substrate is removed, and wirings and the like are formed in the thin film device. The second substrate is removed next, and an active matrix display device having flexibility is formed. Further, parasitic capacitance can be reduced by forming wirings, after removing the first substrate, on the side in which a gate electrode over an active layer is not formed.
申请公布号 US6682963(B2) 申请公布日期 2004.01.27
申请号 US20010951384 申请日期 2001.09.14
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 ISHIKAWA AKIRA
分类号 G02F1/1333;G02F1/1368;H01L21/77;H01L21/84;(IPC1-7):H01L29/00 主分类号 G02F1/1333
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