发明名称 Multiple or graded epitaxial wafers for particle or radiation detection
摘要 The present invention provides a particle or electromagnetic radiation sensor structure, comprising a substrate (13) having a major surface and a sensitive layer (16) on the major surface of the substrate (13), the sensitive layer (16) being sensitive to particle or electromagnetic radiation and having a first surface (17) remote from the substrate (13). The sensitive layer (16) has a doping concentration gradient from a higher doping level to a lower doping level, the doping concentration decreasing from the substrate (13) to the first surface (17) of the sensitive layer (16). According to an embodiment, over any distance across the sensitive layer (16) which is half of the thickness of the sensitive layer (16), the ratio between the highest doping level and the lowest doping level is at least a factor 2, preferably at least a factor 3 or more.The present invention also provides a method for obtaining such a sensor structure, as well as arrays comprising such sensor structures.
申请公布号 US6683360(B1) 申请公布日期 2004.01.27
申请号 US20020056573 申请日期 2002.01.24
申请人 FILLFACTORY 发明人 DIERICKX BART
分类号 H01L27/14;H01L27/146;H01L31/0352;H01L31/115;H01L31/18;(IPC1-7):H01L27/14 主分类号 H01L27/14
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