发明名称 |
Method of forming shallow trench isolation and method of manufacturing a semiconductor device using the same |
摘要 |
A method of forming a shallow trench isolation of a semiconductor device, includes providing a semiconductor substrate including field and active regions; forming a first insulating layer and a mask layer on the active region that expose the field region; etching the exposed field region to form a shallow trench; etching a portion of the mask layer to recess the mask layer a predetermined distance from an edge of the trench; forming a second insulating layer in the trench, the second insulating layer having a step higher than the active region; forming a liner layer as covering the mask layer and the second insulating layer; forming a third insulating layer as covering the liner layer and filling the trench; etching the mask, liner and third insulating layers to provide a planarized surface; removing the remaining mask layer; and removing the remaining first insulating layer.
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申请公布号 |
US6682986(B2) |
申请公布日期 |
2004.01.27 |
申请号 |
US20020100169 |
申请日期 |
2002.03.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUNG-HOAN |
分类号 |
H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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