| 摘要 |
According to one exemplary embodiment, a bipolar transistor, such as a heterojunction bipolar transistor ("HBT"), comprises a base having a top surface. The HBT further comprises a first inner spacer and a second inner spacer situated on the top surface of the base. The HBT further comprises a first outer spacer situated adjacent to the first inner spacer and a second outer spacer situated adjacent to the second inner spacer on the top surface of the base. According to this exemplary embodiment, the HBT further comprises an emitter situated between the first and second inner spacers. The HBT may further comprise an intermediate oxide layer situated on the first and second outer spacers. The HBT may further comprise an amorphous layer situated on said intermediate oxide layer. The HBT may also comprise an antireflective coating layer on the amorphous layer.
|
