发明名称 |
Semiconductor device and method and apparatus for fabricating the same |
摘要 |
The semiconductor device of the present invention includes: a substrate; a first conductor film supported by the substrate; an insulating film formed on the substrate to cover the first conductor film, an opening being formed in the insulating film; and a second conductor film, which is formed within the opening of the insulating film and is in electrical contact with the first conductor film. The second conductor film includes: a silicon-containing titanium nitride layer formed within the opening of the insulating film; and a metal layer formed over the silicon-containing titanium nitride layer. The metal layer is mainly composed of copper.
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申请公布号 |
US6683381(B2) |
申请公布日期 |
2004.01.27 |
申请号 |
US20010884135 |
申请日期 |
2001.06.20 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRSIAL CO., LTD. |
发明人 |
HARADA TAKESHI |
分类号 |
H01L21/768;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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