发明名称 |
Method of forming capacitor constructions |
摘要 |
The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.
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申请公布号 |
US6683005(B2) |
申请公布日期 |
2004.01.27 |
申请号 |
US20030347043 |
申请日期 |
2003.01.17 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU GURTEJ S.;DOAN TRUNG TRI |
分类号 |
H01L21/02;H01L21/268;H01L21/3105;H01L21/314;H01L21/316;(IPC1-7):H01L21/302;H01L21/462 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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