发明名称 |
Method of forming n-and p- channel field effect transistors on the same silicon layer having a strain effect |
摘要 |
A method for forming a Field Effect Transistor (FET) within a strain effect semiconductor layer is disclosed, whereby the source and drain of the FET are formed only in the strain effect silicon layer. The FET may be formed as a gate electrode of a p-channel type field effect transistor, and a gate electrode of a n-channel type field effect transistor on the silicon layer which has the strain effect through a gate insulating film. The sources and drains of p- and n-type diffusion layers are then formed in the silicon layer having the strain effect, on both sides of the gate electrode.
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申请公布号 |
US6682965(B1) |
申请公布日期 |
2004.01.27 |
申请号 |
US19980048288 |
申请日期 |
1998.03.26 |
申请人 |
SONY CORPORATION;SONY ELECTRONICS INC. |
发明人 |
NOGUCHI TAKASHI;SONEDA MITSUO |
分类号 |
H01L29/78;H01L21/8238;H01L27/092;(IPC1-7):H01L21/823 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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