| 摘要 |
The present invention is a method of producing a semiconductor device usable as a photodetector having a plurality of pixels, each composed of an MIS photoelectric conversion element and a switching TFT. Each MIS photoelectric conversion element has a first electrode layer, an insulating layer, a photoelectric conversion semiconductor layer, a barrier layer for preventing carriers from entering the photoelectric conversion semiconductor layer, and a second electrode layer formed on an insulating substrate in that order. Each switching TFT has a first electrode layer, an insulating layer, a semiconductor layer, an ohmic contact layer for the semiconductor layer, and a second electrode layer formed on the same insulating substrate in that order. This method includes a step for forming source and drain electrodes of each TFT and removing portions of at least the ohmic contact layer each corresponding to the TFT channel of each TFT using the same mask pattern, and a step for forming the upper electrode of each photoelectric conversion element using another mask pattern. Therefore, without shifts caused by mask misalignment, the resulting device has stable characteristics.
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