发明名称 True defect monitoring through repeating defect deletion
摘要 A method of deleting repeating defects having no effect on product yield of a wafer so that true defects on the wafer are more readily found. A wafer having a plurality of dies thereon is provided. The wafer is scanned to find any repeating defects. If the repeating defects have no effect on the product yield, the area around the repeating defects is marked out as "don't care" region. Another wafer scanning operation to find the true defects is subsequently conducted by scanning the region outside the "don't care" region.
申请公布号 US6684164(B1) 申请公布日期 2004.01.27
申请号 US20020064908 申请日期 2002.08.28
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 CHEN KUNG-YI;CHEN WEI-MING;KU SHU-LING;TING MAO-I;HO LIEN-CHE
分类号 G03F7/20;G06T7/00;(IPC1-7):G06K9/64 主分类号 G03F7/20
代理机构 代理人
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