| 摘要 |
PURPOSE: To provide a hydrogenation method for manufacturing a semiconductor device with improved characteristics. CONSTITUTION: A region containing hydrogen ion with a high concentration is formed inside a substrate 101 with an insulation surface by the ion doping method. A hydrogen ion is thermally diffused from the region by a heat treatment of 300-450°C, thus compensating for, for example, the dangling bond and defect level of an active layer 103. In this manner, hydrogenation can be made from the inside of a semiconductor device, thus achieving an efficient hydrogenation.
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