| 摘要 |
PURPOSE: To provide a method and an apparatus for plasma doping having the superior controllability of an impurity concentration introduced on the surface of a sample, and to provide a matching circuit suitable for the method and the apparatus. CONSTITUTION: When an evacuated vessel 1 is exhausted by a pump 3, while predetermined gas is introduced from a gas supply unit 2 into the vessel 1, high-frequency power is applied to a coil 8 by a high-frequency power source 5, and while the container 1 is maintained at predetermined pressure, plasma is generated in the vessel 1, and a substrate 9 placed on a sample electrode 6 can be plasma-doped. Then, an impurity concentration can be controlled based on a measured value by an emission spectroscopic apparatus 13 and a measured value by a high-frequency voltage-measuring unit 15.
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