| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of restraining the short phenomenon between a storage node contact and a bit line. CONSTITUTION: A plurality of bit lines(35) are formed at the upper portion of a semiconductor substrate(31). After an HDP nitride layer(37a) is formed on the entire surface of the resultant structure, a bit line pattern is formed by selectively patterning the HDP nitride layer for exposing the upper surface of the semiconductor substrate. An interlayer dielectric(39) made of an oxide layer, is formed on the entire surface of the resultant structure. A storage node contact hole(41) is formed by selectively removing the interlayer dielectric for partially exposing the semiconductor substrate. A storage node contact plug(43) is formed at the inner portion of the storage node contact hole.
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