| 摘要 |
PURPOSE: A dual work function metal gate electrode using tungsten and a manufacturing method thereof are provided to be capable of reducing threshold voltage. CONSTITUTION: A semiconductor device is provided with an N channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor) gate and a P channel MOSFET gate. The N channel MOSFET includes a WAx layer(22) deposited at the first predetermined upper portion of a semiconductor substrate and a W layer(25). At this time, the WAx layer having a work function of 4.2-4.4 eV, is made of one selected from a group consisting of Ta, Nb, or Ti. The P channel MOSFET includes a WBx layer(23) deposited at the second predetermined upper portion of the semiconductor substrate and the W layer. At this time, the WBx layer having a work function of 4.7-5.2 eV, is made of one selected from a group consisting of Mo, Ni, or Pt.
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