METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving an ASER(Accelerated Soft Error Rate). CONSTITUTION: After forming the first conductive type well at the inner portion of a semiconductor substrate(100), a gate(200) is formed at the upper portion of the semiconductor substrate. An LDD(Lightly Doped Drain) region(400) is formed at both sides of the gate in the semiconductor substrate by carrying out the second conductive type ion implantation process. A spacer(300) is formed at both sidewalls of the gate. The second conductive type junction region(500) is formed at both sides of the gate in the semiconductor substrate by carrying out the second conductive type ion implantation process. The first conductive type counter junction region(600) is formed at the lower portion of the second conductive type junction region by carrying out the first conductive type ion implantation process.