METHOD FOR FORMING BIT LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a bit line of a semiconductor device is provided to prevent the generation of local stepped portions and the generation of bridges by implanting additionally P+ ions on the entire surface of a wafer. CONSTITUTION: A word line pattern, a plug(117), a P+ S/D region(121), an N+ S/D region(123) are formed on a semiconductor substrate. An interlayer dielectric(119) is formed thereon. A contact hole is formed by etching the interlayer dielectric to expose the P+ S/D region(121). P+ impurity ions are additionally implanted into the interlayer dielectric. A contact hole is formed by etching the interlayer dielectric(119) to expose the N+ S/D region(123). A contact hole is formed by etching the interlayer dielectric to expose the plug(117). A barrier metal layer(129) is formed on the interlayer dielectric. A tungsten layer(131) is formed on the barrier metal layer(129). A tungsten bit line is formed by etching the tungsten layer(131) and the barrier metal layer.