| 摘要 |
The apparatus for plasma treatment of a non-conductive hollow substrate (1), comprises a plurality of ionisation energy sources (7-10) disposed adjacent to each other all along the part of the substrate to be treated. The apparatus further comprises a processing means (11) for sequentially powering the plurality of ionisation energy sources from a radio frequency power source (6). Each ionisation energy source (7) is comprised of two parts (7a, 7b) sandwiching the substrate. The ionisation energy sources can be capacitively or inductively coupled plasma sources. <IMAGE>
|
