| 摘要 |
PURPOSE: A method for manufacturing a flash memory device is provided to be capable of preventing the generation of seam when forming a tungsten silicide layer, for improving the yield of the device. CONSTITUTION: After forming an isolation layer(22) at the inner portion of a semiconductor substrate(21), a tunnel oxide layer(23) and the first polysilicon layer(24) are sequentially formed at the upper portion of the resultant structure. Then, a dielectric layer(25) and the second polysilicon layer(26) are sequentially formed on the entire surface of the resultant structure. A tungsten silicide layer(27) is formed at the upper portion of the second polysilicon layer by controlling the inflow of WF6 and SiH4 gas according to the thickness of the second polysilicon layer and the CD(Critical Dimension) of a floating gate. After forming an anti-reflective coating(28) at the upper portion of the tungsten silicide layer, a stack gate made of a floating gate and a control gate, is formed by selectively etching the resultant structure.
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