发明名称 |
INTEGRATION OF TWO MEMORY TYPES |
摘要 |
Both a non-volatile memory (NVM) and a dynamic nanocrystal memory (DNM) are integrated on a semiconductor substrate. Control gates and control dielectrics with embedded nanocrystals or discrete storage elements are formed over differing thicknesses of tunnel dielectrics to form the two memories. Source and drain regions are formed within the semiconductor substrate adjacent to the tunnel dielectrics. Various methods can be used to form a thin tunnel oxide and a thick tunnel oxide by adding minimum processing steps.
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申请公布号 |
KR20040007728(A) |
申请公布日期 |
2004.01.24 |
申请号 |
KR20037016432 |
申请日期 |
2003.12.15 |
申请人 |
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发明人 |
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分类号 |
H01L27/10;H01L27/115;H01L21/28;H01L21/8242;H01L21/8247;H01L27/108;H01L29/788;H01L29/792 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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