发明名称
摘要 A manufacturing method of semiconductor devices, micromachines such as semiconductor device, narrow pitch connectors, electrostatic actuators or piezoelectric actuators, and ink jet heads, ink jet printers, liquid crystal panels, and electronic appliances, including them characterized in that short circuit due to dusts floating in the air will not take place. In a method where a silicon wafer (30) undergoes dicing to manufacture semiconductor devices (20), a groove (30a) covered by an insulating layer and spanning a dicing line is formed in the above described silicon wafer, and the silicon wafer undergoes dicing along the dicing line. <IMAGE>
申请公布号 KR100416174(B1) 申请公布日期 2004.01.24
申请号 KR20007013440 申请日期 2000.11.29
申请人 发明人
分类号 H01L41/08;B81B1/00;B81B7/00;H01L21/78;H01L23/552;H01L23/58;H01R31/06;H02N2/04 主分类号 H01L41/08
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