| 摘要 |
A nonvolatile semiconductor memory, including a ferroelectric capacitor connected to the gate of a MOSFET, comprises a silicon thin film formed in stripes on an insulated substrate and having an n+-region, a p-region and an n+-region layered in its thickness direction, a hole formed in a portion of the silicon thin film and extending to the lower n+-region, a gate electrode provided on the side walls of the hole with a gate insulting film interposed therebetween, and a ferroelectric capacitor formed on the silicon thin film and having its lower electrode connected to the gate electrode.
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