METHOD FOR FORMING JUNCTION REGION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a junction region of a semiconductor device is provided to be capable of restraining the diffusion of dopants under a post-annealing process by activating the dopants using a two-step RTA(Rapid Thermal Annealing) process and simultaneously forming Si-N based diffusion barrier at the surface of the junction region. CONSTITUTION: After forming a gate electrode(13) at the upper portion of a silicon substrate(10), an oxide spacer(14) is formed at both sidewalls of the gate electrode. An ion implantation process is carried out at both sides of the gate electrode for forming a junction region(15). A two-step RTA process is carried out for activating the implanted ions and forming a diffusion barrier(16) at the surface portion of the junction region.