| 摘要 |
PURPOSE: A method for forming a gate line of a flash memory device is provided to be capable of restraining photoresist remaining phenomenon due to the topology of a cell pattern. CONSTITUTION: A tunnel oxide layer, the first polysilicon layer(202), a dielectric layer(204), the second polysilicon layer(206), a silicide layer(208), a hard mask(210), and an anti-reflective coating(212) are sequentially formed at a cell region(A) of a semiconductor substrate(200). After forming the first photoresist pattern at the upper portion of the resultant structure, the anti-reflective coating and the hard mask are selectively etched by using the first photoresist pattern as an etching mask. The second photoresist pattern(216) is formed at the upper portion of a peripheral region(B). The silicide layer, the second polysilicon layer, the dielectric layer, the first polysilicon layer, and the tunnel oxide layer of the cell region, are selectively etched by using the anti-reflective coating and the hard mask as an etching mask.
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