发明名称 METHOD FOR FABRICATING FA MODULE
摘要 PURPOSE: A method for fabricating an FA module is provided to perform a signal analysis for a desired part by forming an under-metal line on an inter-metal oxide layer, forming a top metal line, and etching an FA module to expose an FA via. CONSTITUTION: An under-metal line(22) is formed by depositing a metal material on an inter-metal oxide layer(20) and performing an etch process. The first photoresist layer(24) is stacked on the inter-metal oxide layer(20). A pattern is formed by performing an exposure process. A via hole is formed by performing the etch process using the first photoresist pattern. A top metal line(30) is formed by stacking the metal material on the resultant structure. The second photoresist layer is stacked on the top metal line(30). A plurality of FA vias(36) are formed on an FA pad by etching the top metal line.
申请公布号 KR20040007154(A) 申请公布日期 2004.01.24
申请号 KR20020041812 申请日期 2002.07.16
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JANG, YUN YEONG
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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