SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided which comprises a direct read sense amplifier capable of reducing undesired current consumption through the direct read sense amplifier. CONSTITUTION: A plurality of memory cell array blocks(50-1 - 50-n) comprise a plurality of memory cells connected between a plurality of word lines and a plurality of bit line pairs and are selected in response to a plurality of block selection signals respectively. A fixed number of local data input/output line pairs of each of the plurality of memory cell array blocks transmit data with the plurality of bit line pairs of the plurality of memory cell array blocks. A read sense amplifier(58) is connected between the plurality of bit line pairs and is activated by a read signal and a column address. A data input/output gate(60) is connected between each bit line pair and each local data input/output line pair, and is activated by a write signal and another column address. A floating circuit is connected between the local data input/output line pairs and makes the local data input/output line pairs to a floating state.