| 摘要 |
PURPOSE: A method for fabricating an image sensor is provided to enhance the yield and the productivity by restricting the generation of cracks of a micro lens protection layer and reducing a processing period of time and a manufacturing cost. CONSTITUTION: A base structure including a light receiving element and a metal line is formed on a semiconductor wafer including a net die region and an edge die region. A passivation layer(202) is formed on the base structure. A color filter array(204), an over-coating layer(206), and a micro lens(208) are formed on the net die region and the edge die region. A micro lens protection layer(209) is formed on the entire surface of the wafer without removing the micro lens(208), the over-coating layer(206), and the color filter array(204) from the edge die region.
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