METHOD FOR FORMING ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an electrode of a semiconductor device is provided to be capable of preventing a notch phenomenon by forming a hard mask using a predetermined deposition condition or adding an annealing process after forming the hard mask. CONSTITUTION: The first and second electrode layer are sequentially formed at the upper portion of a semiconductor substrate(100). A hard mask nitride layer is formed at the upper portion of the resultant structure by carrying out an LPCVD(Low Plasma Chemical Vapor Deposition) process under a predetermined temperature, or higher. A hard mask pattern(400a) is formed by selectively removing the hard mask nitride layer. A plurality of electrode patterns(500) are formed by selectively etching the electrode layers using the hard mask pattern as an etching mask. Preferably, the predetermined temperature is 650 °C.