| 摘要 |
PURPOSE: A blank mask and a method for manufacturing the same are provided to obtain an equal deposition characteristic by stabilizing a state of plasma, and obtain patterns in good etching state. CONSTITUTION: A shielding film(20) is formed on a transparent substrate(10) through reactive sputtering by mixing methane gas, argon gas, and nitrogen gas to a metal target at a certain partial pressure ratio. A first reflection preventing film(31) and a second reflection preventing film(32) are formed on the shielding layer through reactive sputtering by mixing argon gas, carbon dioxide, nitrogen monoxide or nitrogen dioxide, and nitrogen at a certain partial pressure ratio. A resist is applied on the reflection preventing films. Patterns are formed by using electron beam or light source. The shielding film and the reflection preventing films are etched according to the patterns. The resist remaining on the reflection preventing films is removed. |
