发明名称 SEMICONDUCTOR MEMORY DEVICE GENERATING INTERNAL VOLTAGE SELECTIVELY ACCORDING TO EXTERNAL VOLTAGE LEVEL AND INTERNAL VOLTAGE GENERATION CIRCUIT THEREOF
摘要 PURPOSE: A semiconductor memory device generating an internal voltage selectively according to an external voltage level is provided to reduce mask fabrication cost and to make the management of database easy without regard to the external voltage level. CONSTITUTION: According to the semiconductor memory device using a high or low external voltage, an internal voltage pad(310) connects a low external voltage to an internal voltage. An internal voltage generation circuit(330) inputs a high external voltage and generates the above internal voltage in response to an internal voltage control signal. And an internal voltage control signal generation circuit(360) generates the above internal voltage control signal according to the high voltage or the low voltage of the above external voltage.
申请公布号 KR20040006937(A) 申请公布日期 2004.01.24
申请号 KR20020041543 申请日期 2002.07.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JONG HYEON;CHOI, JUNG YONG;KIM, JAE HUN;LEE, GYU CHAN;LEE, SANG JAE;NA, JONG SIK
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
代理机构 代理人
主权项
地址