| 摘要 |
PURPOSE: A method for forming a metal trench of a semiconductor device is provided to be capable of preventing bridge between metals. CONSTITUTION: A nitride stop layer(300a) and a trench oxide layer(400a) are sequentially formed on an interlayer dielectric(200) with a metal contact(100). A barrier pattern(500a) is formed on the trench oxide layer. A trench(700) is formed by removing the exposed trench oxide layer. The nitride stop layer(300a) is selectively etched to expose the metal contact(100). Then, a metal plug(800) is formed in the trench.
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