| 摘要 |
PURPOSE: A method for forming fine patterns is provided to be capable of achieving sufficient overlay margin of a storage node contact. CONSTITUTION: An interlayer dielectric(110) is formed on a semiconductor substrate(100). The first storage node contact(111) is formed by selectively etching the interlayer dielectric. The first storage node contact is filled with a lower plug(112). The first oxide layer(114), a nitride layer(116) and the second oxide layer(118) are sequentially formed on the resultant structure. By selectively etching the second oxide layer, the nitride layer and the first oxide layer, the second storage node contact(119) is formed to overlap the first storage node contact. Then, the second storage node contact is filled with an upper plug.
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