METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve the electric field and increase a refresh period by increasing the thickness of a gate spacer of a sidewall of a gate electrode. CONSTITUTION: A gate electrode is formed on an upper surface of a semiconductor substrate. A cell junction region is formed on the semiconductor substrate of both sides of the gate electrode by performing an ion implantation process, using the energy of 15 to 60keV. A gate spacer having the thickness of 300 to 600 angstrom is formed on a sidewall of the gate electrode. A cell plug implant region is formed on the cell junction region by performing the ion implantation process using the energy of 15 to 100keV. A contact plug(600) is formed to be electrically connected to the cell junction region.