METHOD FOR FORMING METAL LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal layer of a semiconductor device is provided to improve a burying characteristic of a fine contact hole and prevent the loss of a reaction chamber by performing a deposition process under the present air pressure without using a high vacuum chamber. CONSTITUTION: A liquefied titanium compound(5) is coated on an upper surface of a wafer(1). A solvent is removed from the liquefied titanium compound(5) by hardening the liquefied titanium compound on the upper surface of the wafer(1). A titanium metal layer is deposited thereon. The liquefied titanium compound(5) has a structure of H2TiO5. The liquefied titanium compound is deposited by using a spin coating method. In the spin coating method, the rotation speed is 500 to 1000 RPM(Revolution Per Minute).