| 摘要 |
PURPOSE: A CMP(Chemical Mechanical Polishing) method using CeO2 based slurry, is provided to be capable of completely removing CeO2 grains when carrying out a post cleaning process. CONSTITUTION: After preparing a substrate(20) having an oxide layer, a CMP process is carried out at the oxide layer by using CeO2 based slurry. A post cleaning process is carried out at the substrate by using a cleaning solution containing at least hydrogen peroxide. Preferably, the post cleaning process is completed by sequentially carrying out the first cleaning process, the second cleaning process, and a drying process. At this time, the first cleaning process is carried out by using the first cleaning solution containing hydrogen peroxide and the second cleaning process is carried out by using the second cleaning solution containing fluorine.
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