| 摘要 |
PURPOSE: An exposure mask is provided to prevent a difference of CD uniformity and reduce a period and a cost for exposure process and by forming dummy patterns on a predetermined region of an exposure mask corresponding to a scribe lane region. CONSTITUTION: An exposure mask includes a plurality of plate dummy patterns and a plurality of line space dummy patterns(1300-1 to 1300-4). The plate dummy patterns are formed on each region of an exposure mask corresponding to fourfold exposure regions of scribe lane regions of a semiconductor wafer. The line space dummy patterns(1300-1 to 1300-4) are formed on each region of the exposure mask corresponding to twofold exposure regions of the scribe lane regions of the semiconductor wafer. The plate dummy patterns and the line space dummy patterns(1300-1 to 1300-4) are formed with chrome patterns.
|
