发明名称 SENSING MARGIN CONTROL APPARATUS
摘要 PURPOSE: A sensing margin control apparatus is provided to increase a sensing margin of data by increasing a potential of a storage node of a cell plate. CONSTITUTION: A delay part(10) delays a word line enable signal according to the input of an active signal. A comparison circuit part(20) selects the first plate voltage according to an output signal of the delay part, and outputs a plate voltage selection signal controlling to select the second plate voltage higher than the first plate voltage according to the input of a precharge signal. A plate voltage control part(30) selects a corresponding plate voltage of the first plate voltage and the second plate voltage according to a plate voltage selection signal applied from the comparison circuit part. And a memory cell(40) controls a storage node potential of a cell capacitor using the corresponding plate voltage applied from the plate voltage control part.
申请公布号 KR20040006334(A) 申请公布日期 2004.01.24
申请号 KR20020040584 申请日期 2002.07.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AHN, GYEONG JUN
分类号 G11C11/401;(IPC1-7):G11C11/401 主分类号 G11C11/401
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