发明名称 |
IMAGE SENSOR FOR IMPROVING PHOTOSENSITIVITY |
摘要 |
PURPOSE: An image sensor for improving photosensitivity is provided to improve the performance of an image sensor by preventing the crosstalk caused by incident light. CONSTITUTION: An image sensor for improving photosensitivity includes a plurality of photo diodes(PD) and a plurality of micro lenses(ML). The photo diodes(PD) are arranged in a predetermined interval. The micro lenses(ML) are arranged on overlapped parts in order to concentrate incident rays on the photo diodes(PD). In the micro lens(ML), an edge part of a pixel region is larger than a center part of the pixel region. The micro lens is shifted from the edge part to the center part. The image sensor for improving photosensitivity includes a color filter array(CFA), which is installed between the photo diode(PD) and the micro lens(ML).
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申请公布号 |
KR20040006813(A) |
申请公布日期 |
2004.01.24 |
申请号 |
KR20020041207 |
申请日期 |
2002.07.15 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KWON, GYEONG GUK;LIM, YEON SEOP |
分类号 |
H01L27/146;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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主权项 |
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地址 |
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