发明名称 IMAGE SENSOR FOR IMPROVING PHOTOSENSITIVITY
摘要 PURPOSE: An image sensor for improving photosensitivity is provided to improve the performance of an image sensor by preventing the crosstalk caused by incident light. CONSTITUTION: An image sensor for improving photosensitivity includes a plurality of photo diodes(PD) and a plurality of micro lenses(ML). The photo diodes(PD) are arranged in a predetermined interval. The micro lenses(ML) are arranged on overlapped parts in order to concentrate incident rays on the photo diodes(PD). In the micro lens(ML), an edge part of a pixel region is larger than a center part of the pixel region. The micro lens is shifted from the edge part to the center part. The image sensor for improving photosensitivity includes a color filter array(CFA), which is installed between the photo diode(PD) and the micro lens(ML).
申请公布号 KR20040006813(A) 申请公布日期 2004.01.24
申请号 KR20020041207 申请日期 2002.07.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KWON, GYEONG GUK;LIM, YEON SEOP
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
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