METHOD FOR MANUFACTURING Si1-xGex FILM ON SILICON SUBSTRATES

摘要

PURPOSE: A method for manufacturing a Si1-xGex film on a silicon substrate is provided to reduce defect density and to improve crystal quality by using ion-implantation at elevated temperatures for amorphization re-crystallization. CONSTITUTION: A silicon substrate(42) is prepared. An epitaxial layer of Si1-xGex is deposited on the silicon substrate to form a Si1-xGex/Si interface. Amorphizing of the Si1-xGex layer is performed at a temperature greater than Tc to form an amorphous and graded SiGe layer. The resultant structure is annealed at a temperature of between about 650°C to 1100°C for between about ten seconds and sixty minutes, thereby forming a recrystallized SiGe layer(48).