| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method which is capable of solving the problem wherein lattice mismatching occurs between an Si substrate and an epitaxially grown semiconductor material. SOLUTION: A c-BP film is formed as a buffer layer on the Si substrate, and a film of 3C-SiC or c-GaN is epitaxially grown on the buffer layer to manufacture a semiconductor. Or, the c-BP film is formed as a buffer layer on the Si substrate, and a film of amorphous SiC or amorphous GaN is formed on the c-BP film. Then, the film of amorphous SiC or GaN is formed at a temperature range of 300 to 600°C. COPYRIGHT: (C)2004,JPO
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