| 摘要 |
A diode laser formed by a plurality of layers including n-type layers and p-type layers, the plurality of layers having a substantially asymmetric refractive index profile with respect to the layer growth direction so as to generate an optical field distribution with a larger fraction in n-type layers than in p-type layers, and configured to generate a beam with a divergence of less than about 28° in the growth direction. The layers include an active layer for generating the optical field, a trap layer for attracting the optical field, and a separation layer between the active layer and the trap layer for repelling the optical field. The laser can be configured to have an internal loss of about 1.2 cm<-1 >or less, and to generate a laser beam with a spot size of at least about 1.1 mum and a divergence of approximately 13° in the growth direction. If the length of the laser is at least about 1 mm, the threshold current density of the laser can be less than about 400 A cm<-2>.
|
