发明名称 |
SILICON CARBIDE MATRIX COMPOSITE MATERIAL, PROCESS FOR PRODUCING THE SAME AND PROCESS FOR PRODUCING PART OF SILICON CARBIDE MATRIX COMPOSITE MATERIAL |
摘要 |
<p>Silicon carbide matrix composite material (1) comprising silicon carbide matrix (2) as a host. The silicon carbide matrix (2) comprises first silicon carbide phase (3) of 0.1 to 10 mum average crystal grain diameter and second silicon carbide phase (4) of 0.01 to 2 mum average crystal grain diameter. In interstices of silicon carbide crystal grains constituting the silicon carbide matrix (2), liberated silicon phase (5) amounting to, for example, 5 to 50 wt.% based on the composite material (1) is present continuously in network form. This fine structure enables realizing high strength and high toughness of the silicon carbide composite material (1).</p> |
申请公布号 |
WO2004007401(A1) |
申请公布日期 |
2004.01.22 |
申请号 |
WO2003JP07700 |
申请日期 |
2003.06.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;SUYAMA, SHOKO;KAMEDA, TSUNEJI;ITOH, YOSHIYASU |
发明人 |
SUYAMA, SHOKO;KAMEDA, TSUNEJI;ITOH, YOSHIYASU |
分类号 |
C04B35/565;C04B35/56;C04B35/573;C04B37/00;(IPC1-7):C04B35/56 |
主分类号 |
C04B35/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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