发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an ultrasonic cleaning technique for LSIs giving reduced damage on LSI patterns, while maintaining high cleaning performance. SOLUTION: To the tip of a quartz rod 204 arranged over a wafer stage 201 of an ultrasonic cleaning apparatus 200, an attenuating member 207 is attached for attenuating ultrasonic energy transmission to a cleaning liquid 208, with a structure so that no excessive ultrasonic energy is applied to the surface of a board 1 from the tip of the quartz rod 204. Since the peripheral side of a wafer chuck 202 attached to the wafer stage 201 is designed to be substantially flush with the surface of the board 1, the cleaning liquid 208 spreads to as far as the outermost of the wafer chuck 202, and the boundary between the cleaning liquid 208 and the air comes to be positioned at farther the outside of the periphery of the substrate 1, excessive ultrasonic energy will not be applied to the periphery of the substrate 1. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004022550(A) 申请公布日期 2004.01.22
申请号 JP20020170930 申请日期 2002.06.12
申请人 RENESAS TECHNOLOGY CORP;RENESAS EASTERN JAPAN SEMICONDUCTOR INC 发明人 TAKEUCHI KOKI;TANZAWA ARITOMO;TOMOSAWA AKIHIRO;UMEMURA SHINICHIRO;AZUMA TAKASHI
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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