发明名称 Semiconductor device, and method for manufacturing semiconductor device
摘要 A semiconductor device includes a substrate, a fuse that can be blown by the radiation of light formed above the substrate, and insulating films formed on the fuse and on the substrate. One of the insulating films includes a flat portion formed on the substrate and the surface thereof is higher than the surface of the fuse, and a protruded portion formed on the fuse continuously from the flat portion, and protruded from the surface of the flat portion.
申请公布号 US2004012071(A1) 申请公布日期 2004.01.22
申请号 US20030350093 申请日期 2003.01.24
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 IDO YASUHIRO;IWAMOTO TAKESHI
分类号 H01L21/82;H01L23/525;H01L27/10;(IPC1-7):H01L29/00;H01L21/44 主分类号 H01L21/82
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